triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com product datasheet 1 rev 11/10/98 february 4, 2003 19 - 27 ghz medium power amplifie r TGA1073G-SCC key features and performance ? 0.25 um phemt technology ? 22 db nominal gain ? 25 dbm nominal pout @ p1db ? bias 5-7v @ 220 ma ? chip dimensions 2.55 mm x 1.15mm primary applications ? point-to-point radio ? point-to-multipoint communications -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 18 19 20 21 22 23 24 25 26 27 28 frequency (ghz) gain and return loss (db) s21 s11 s22 0 4 8 12 16 20 24 28 19 20 21 22 23 24 25 26 27 28 29 frequency (ghz) p1db (dbm) the triquint TGA1073G-SCC is a three stage mpa mmic design using triquint?s proven 0.25 um power phemt process. the TGA1073G-SCC is designed to support a variety of millimeter wave applications including point-to-point digital radio and point-to-multipoint communications. the three stage design consists of a 200 um input device driving a 480um interstage device followed by an 800um output device. the TGA1073G-SCC provides 25dbm nominal output power at 1db compression across 19-27ghz. typical small signal gain is 22 db. the TGA1073G-SCC requires minimum off-chip components. each device is 100% dc and rf tested on-wafer to ensure performance compliance. the device is available in chip form.
triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com product datasheet 2 rev 11/10/98 february 4, 2003 maximum ratings 1/ symbol parameter value notes v + positive supply voltage 8 v 2/ i + possitive supply current 296 ma 2/ 3 / i - negative gate current 8.8 ma 3/ p in input continuous wave power 18.2 dbm 2/ p d power dissipation 1.32 w 2/ 4 / t ch operating channel temperature 150 0 c5/ 6 / t m mounting temperature (30 seconds) 320 0 c t stg storage temperature -65 to 150 0 c 1/ these ratings represent the maximum operable values for this device. 2/ combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3/ total current for all stages. 4/ when operated at this bias condition with a base plate temperature of 55 0 c, the mean time to failure (mttf) is 1e+6 hrs. 5/ junction iperating temperature will directly affect the device median time to failure (mttf). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 6/ these ratings apply to each individual fet. dc specifications (100%) (t a = 25 c nominal) notes symbol test conditions 2/ limits units min max i dss3 std 80 376 ma g m3 std 176 424 ms 1/ |v p1 |std 0.5 1.5 v 1/ |v p2 |std 0.5 1.5 v 1/ |v p3 |std 0.5 1.5 v 1/ |v bvgd1 |std 11 30 v 1/ |v bvgs1 |std 11 30 v 1/ v p , v bvgd , and v bvgs are negative. 2/ the measurement conditions are subject to change at the manufacture?s discretion (with appropriate notification to the buyer).
triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com product datasheet 3 rev 11/10/98 february 4, 2003 rf specifications (t a = 25 c nominal) note test measurement conditions value units 6v @ 220ma min typ max 19 ghz 16 20 db 1/ small-signal gain magnitude 20 ? 25 ghz 19 23 db 20 ghz 21 23 dbm 22 ghz 24 25 dbm power output at 1 db gain compression 23.5 ghz 24 26 dbm 1/ input return loss magnitude 19 ? 25 ghz -20 db 1/ output return loss magnitude 19 ? 25 ghz -15 db 2/ output third order intercept 32 dbm 1/ rf probe data is taken at 1 ghz steps. 2/ minimum output third-order-intercept (otoi) is generally 6db minimum above the 1db compression point (p1db). calculations are based on standard two-tone testing with each tone approximately 10db below the nominal p1db. factors that may affect otoi performance include device bias, measurement frequency, operating temperature, output interface and output power level for each tone. reliability data parameter bias conditions p diss r jc t ch t m v d (v) i d (ma) (w) (c/w) ( c) (hrs) r jc thermal resistance (channel to backside of c/p) 6 220 1.32 71.7 149.6 1.0 e6 note: assumes eutectic attach using 1.5 mil 80/20 ausn mounted to a 20mil cumo carrier at 55 c baseplate temperature. worst case condition with no rf applied, 100% of dc power is dissipated.
triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com product datasheet 4 rev 11/10/98 february 4, 2003 mechanical characteristics
triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com product datasheet 5 rev 11/10/98 february 4, 2003 .01uf .01uf 100pf 100pf 100pf vg vd chip assembly and bonding diagram 100pf rf in rf out
triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com product datasheet 6 rev 11/10/98 february 4, 2003 gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. reflow process assembly notes: use ausn (80/20) solder with limited exposure to temperatures at or above 300 c (30 seconds max). an alloy station or conveyor furnace with reducing atmosphere should be used. no fluxes should be utilized. coefficient of thermal expansion matching is critical for long-term reliability. devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: vacuum pencils and/or vacuum collets are the preferred method of pick up. air bridges must be avoided during placement. the force impact is critical during auto placement. organic attachment can be used in low-power applications. curing should be done in a convection oven; proper exhaust is a safety concern. microwave or radiant curing should not be used because of differential heating. coefficient of thermal expansion matching is critical. interconnect process assembly notes: thermosonic ball bonding is the preferred interconnect technique. force, time, and ultrasonics are critical parameters. aluminum wire should not be used. maximum stage temperature is 200 c. assembly process notes
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